Proceedings of universities. Electronics Electronics home

Том 24 №1

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fundamental researches

Determination of the AB Type Semiconductors Bulk Conductivity in Strong Constant Electric Fields and with Harmonic Effects

Authors: Malyshev I.V., Fil K.A., Goncharova O.A.

7 - 15

ectronics materials

The Study of Composite Materials Based on Polystyrene and Sucrose by the IR-Spectroscopy Method

Authors: Belogorokhov I.A., Belogorokhova L.I.

16 - 21

Technological processes and routes

Metallization of High-Temperature Silicon ICs Based on Tungsten Titanium Alloy

Authors: Belov A.N., Golishnikov A.A., Kostuykov D.A., Shevyakov V.I.

22 - 29

Determination of Junction-to-Case Thermal Resistance from One Transient Cooling Curve

Authors: Evdokimova N.L., Dolgov V.V., Ivanov K.A.

30 - 41

Integrated electronics elements

Comparison of GaAs and GaN HEMT Characteristics

Authors: Guminov N.V., Min Thant Myo, Romanyuk V.A., Shomakhmadov D.P.

42 - 50

Information-communication technologies

Data Reflection and Transposition in the Matrix of a Cellular Automata Computator

Authors: Matyushkin I.V., Zapletina M.A.

51 - 63

Determination of Propagation Factor of a Radar Wave Near Earth Surface

Authors: Minakov E.I., Valikhin G.A.

64 - 71

Model of State Vector in the Form of a Quasi-Random Process for Complex Upper-Air Sounding of the Atmosphere

Authors: Ermoshenko J.M.

72 - 78

Model of a Mobile Robot Movement Control System Based on Fuzzy Logic

Authors: Vinogradov A.N.

79 - 86

Brief reports

Dependence of Silicon Film Thickness on SOI-Lateral Junctionless MOSFET’s Parameters

Authors: Klyuchnikov A.S., Krasyukov A.Y., Artamonova E.A., Korolev M.A., Efimova D.I.

87 - 91

Relationship between Photocurrent Level of Light-Emitting InGaN/GaN Heterostructures and Level of Low-Frequency Noise and Threshold Current

Authors: Sergeev V.A., Frolov I.V., Radaev O.A.

92 - 96