In this work the HEMPT-transistors made of various semiconductor materials with the gate length of 0.2-0.25 µm and width of 200-300 µm have been considered and their characteristics have been compared. The current-voltage and farad-voltage characteristics and also the dependences of small signal S parameters on frequency have been measured. On the basis of the measurements the computer models of transistors: for GaAs - MATERKA, for GaN EEHEMT - have been developed. The adequacy of the developed models has been confirmed by the coincidence of the measured frequency of the parameter | S 21 | and the calculated low-signal power gain. The frequency properties of the manufactured transistors have been studied. In the schemes of linear amplifiers the limit of the oscillation frequency, on which the power amplification is lost, has been calculated. The modeling has shown the possibility of linear amplification for frequencies up to 64 GHz of GaAs transistors and 73 GHz of GaN transistors. In order to determine the maximum possible amplified oscillation frequencies the amplifier circuits with an optimized load of transistors have been designed. The maximum oscillation frequencies of the manufactured transistors a are close to ~ 82 GHz. The power parameters of the transistors have been compared. Small signal coefficients of transistors amplification power are equal and are ~15 dB at frequencies of L and S ranges. The highest drain currents for both transistors in the operation non-sparing regime were 0.34 A/mm with voltage on drain 3 V. To determine the maximum power added efficiency (PAE), the scheme of the nonlinear amplifiers, calculated for a frequency of the amplified oscillations 3 GHz has been developed. The highest PAE was 57 % for GaAs and 65 % for GaN. Taking into account that the electric field strength breakdown in GaN is several times higher that that one in GaAs, the possibility to achieve the efficiency of the transistor from GaN, exceeding 80 %, has been shown. The obtained results are useful for development of microwave monolithic integrated circuits for power amplifiers up to frequencies, including V-range.
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