A formalized method of automated bandgap reference source design has been proposed. The distinctive feature of the method is the automation of the synthesis process of circuit engineering presentation, which considerably reduces the design time. Based on the developed methods in the SOI 180 nm technology the circuit has been designed. It has been shown that the obtained circuit engineering solution has the required characteristics: the power supply rejection ratio at 1 kHz in the worst case is -60 dB, at 1 MHz -44 dB, the maximum consumed current is 25 uA, the temperature coefficient is 24 ppm/°C in the temperature range from -70 to 150 °C, the line regulation is 354 uV/V in the supply voltage range from 2.4 to 7 V.
Vladimir V. Losev
National Research University of Electronic Technology, Moscow, Russia
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