Persons

The mode of ultra-high metal-insulator-semiconductor diode stressed-deformation materials hermetic assembly design, implemented based on the bond silicon membrane with two gold beam-leads under the effect of temperature and an increased atmospheric pressure, has been investigated. The construction is protected by various sealing materials based on lacquers, enamels and compounds. The recommendations on minimization of the stressed-deformation mode of connection of various materials by optimization of the design and technology of the diode have been developed.

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The calculation of characteristics of the MIS varicap with the charge transfer, designed to operate in control devices of SHF range, has been carried out. It has been shown that the limiting frequency of the device is at least 2 times higher as compared to the standard MIS varicap based on the MIS system with a thicker dielectric in the varicap with the charge transfer. The measurement methods of the device parameters of SHF range have been developed. The device samples based on thin substrates of monocrystalline silicon with the epitaxial layers have been produced. The correspondence of the varicap theoretical and experimental characteristics has been determined.

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A new type of the two-electrode MIS varicap - varicap with the charge transfer - has been proposed. It has been shown that in the device of the given type the negative effects, related to the processes of thermal generation and the accumulation of minority carriers, are absent, which enables to increase the limiting frequency and to improve the temperature stability of the varicap operation. Two device constructions have been considered. The experimentally measured characteristics of varicaps match the calculations results.

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In modern satellite communication systems, the side repeaters, using an active phased array antenna receiving and transmitting modules, include, as a rule, the discrete phase shifters. The latter are designed in the form of the hybrid integral circuits or monolithic circuits. In this study the open-frame module of analog-to-digital shifter with phase 0-360° change on domestic controlling SHF MIS varicaps, allowing to maintain the setting phase accuracy not more than 0.5, has been considered. An original scheme of the analog-to-digital phase shifter with the phase change of 0-360° L -range, using the Lange coupler and the phase sifting cells on four microwave MIS varicaps has been proposed. The requirements for the form of the volt-farad feature and the ratio of the overlap capacitance of MIS varicap have been defined. It has been shown that the proposed scheme of the analog phase shifter permits even at the maximum (critical) frequency of SHF MIS varicaps no more than 15 GHz to ensure the loss of the phase shifter in L -range no more than 1.5 dB. Operating of analog-to-digital phase shifter with the phase 0-360° change has been realized by the board digital control. The 8 digit analog converter has been used. The bit width of the discrete control of the phase shifter is 1.4 degree with 256 quantities of the analog converter states. The obtained characteristics of the precision analog-to-digital phase shifter permit to make a conclusion about the prospects of implementing it for solving the issues of synchronization of the active radio target simulator for synthesizing the aperture radars testing and, also, in the composition of receiving and transmitting modules of the few elemental active phased array antennas for L -range.

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