Persons

The study results of the formation of polysilicon elements with the complex relief in the form of silicon islands in the structure of silicon-on insulator (SOI) have been presented. The optimal technological parameters of the process have been defined and the physical-chemical mechanisms, determining them, have been described. A new concept of the polysilicon plasma etching process organization under conditions of the developed complicated relief has been offered. The process of the reactive ion etching of the polysilicon elements in formation of the structure schemes with the increased radiation resistance, such as SOI, has been developed and optimized.

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A model of the nucleation thermodynamics, which takes into account the surface tension value, has been developed. The experiments on formation of the iron clusters formed during the process of ferrocene clusters pyrolysis at various temperatures have been conducted. Based on the theoretical and experimental data the methods for determining the temperature dependence of the surface tension of nano-dimensional clusters have been developed, and the influence of this parameter on the size distribution of clusters has been shown.

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The thermodynamics of the metal nanocluster formation has been developed. An expression for the distribution function of clusters by sizes depending on their production condition has been obtained. It has been shown that the surface tension plays an important role in the cluster formation. The surface tension coefficient value for the iron clusters at 950°C has been found.

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