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The distributions of the electrical potential in the bulk of the five-diode vertically integrated photo-receiving structure have been studied. The spectral photosensitivities of five regions of the conductivity different types have been obtained. The photo relaxation times for the above mentioned regions have been found.
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The influence of the control voltages on the photoelectrical characteristics of the photocell with three vertically integrated --junctions has been studied. The time diagrams of the control impulses for the - and -regions as well as their spectral characteristics have been presented. The dependences of the surface concentration of the photocarriers, generated in SCR n-and p-regions, on the photo exposure, as well as the dependences of photo currents in the - and -regions of the photosensitive photocell with three vertically integrated --junctions on the illumination of absorbed optical radiation have been obtained.
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The characteristics of the multichannel photocell dynamic range have been investigated. The signal-noise ratio for read-out photo signals from n -, p -regions of the photocell has been studied. It has been found that the values of photosensitivity are determined by both, the chosen constructive parameters of the photocell and the maximally possible values of controlling voltages. It has been taken into account that the value of the read-out photo signal of the multichannel photo diode structure is proportional to light flux. The analysis has been executed based on the analytical calculations of one-dimensional thickness model of the photosensitive cell structure, as well as by way of the numerical calculations on a computer of its two-dimensional thickness model using the ISE TCAD device-technological computer-aided design system.
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The numerical simulation of the vertically integrated photosensitive cell, intended for the matrix spectrum-selective photoelectric image converter, has been carried out. The constructive parameters and control voltages of the photocell as well as the electric potential distributions have been investigated. The surface concentrations of the accumulated photo carriers and the thermal relaxation times of the photocell p-n-p-n structure have been calculated.
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The analysis and the numerical calculation of the photorelaxation processes and spectral characteristics of photosensitivity of n- and p-type regions of the three-diode vertical integrated photocell have been performed. The dependencies of the photorelaxation times of the photocell n- and p-type regions on the length of absorbed optical radiation have been obtained.
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