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Previously, during investigation using the apparatus-technological simulation of SOI field-effect Hall sensor in the partial depletion mode an effect of its magnetic sensitivity has been discovered. In the work, in order to experimentally confirm the observed effect, the samples of SOI FEHS have been made and their parameters have been investigated in various modes of their operation. In order to improve the accuracy of measurements in the partial depletion mode the SOI FEHS design with a split drain has been used. The optimum load resistances of the bridge circuit have been determined. The analysis of the investigation of SOI FEHS samples has shown that in the mode of partial depletion, a peak of increased sensitivity has been observed. With the nominal load resistances of 1 MΩ and supply voltage of -9 V, the maximum magnitude of the magnetically induced signal increases by about 3 times in the mode of partial depletion versus full depletion. When recalculating the voltage difference across the load resistances DV to the magnetosensitivity, the magnetic sensitivity in the partial depletion mode can reach the values of 10 V/A·T, which is significantly higher than any known Hall semiconductor elements.

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