Persons

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The crystallization process model, combining both the non-stationary Stephan problem and classical ideas of constitutional super-cooling, has been created. Together with the Navier-Stokes equations for liquid and the heat equation for solid body this model is applied for solving the problem of semiconductor crystal growth from a melt. The formation of the fundamental and technological striations is simulated. The numerical simulation results are compared with the experimental data.

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The mathematical simulation of crystallization process is based on numerical solution of the non-stationary Stephan problem, which is a labor-consuming procedure. A parallel algorithm for the Stephen problem solution within one time layer based on the physical processes decomposition scheme has been proposed. Such approach allows up to 5 times speedup, which is especially important for multi-parameterized simulation and research.

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The model of the process of growing semiconductor crystals by the Bridgeman method with taking into account the non-stationary effect from the technological equipment side has been presented. The comparison of the microhomogeneity value in a crystal with taking into account the multicomponent system peculiarities has been performed.

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