Persons

The features of the state-of-the industry complementary bipolar ( CB ) technology for analog applications have been analyzed and the main trends of their development have been considered. Based on two parameters of the complementary quality - β× V (factor of quality) and BV × f (Johnson parameter) different industrial CB technologies have been compared. By the method of 2D - numerical simulation in TCAD Sentaurus medium for vertical NPN and PNP transistors the p-epitaxial-planar CB technology has been investigated. The quality calibration of the electrical and technological parameters of the 2D-models based on the data of the test structure has shown the adequate accuracy of simulation for practical use.

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The influence of temperature on the most important of the electrical parameters of the complementary bipolar pair of vertical transistors has been numerically investigated as a part of the thermodynamic and drift-diffusion models. The advantage of the thermodynamic model while analyzing the high-power transistors, as the thermodynamic model takes into account the self-heating effect, has been shown. The simulation results have been compared with the experimental characteristics of the test structures. The comparison has shown that for current amplification factor β and the voltage Earley V the computational error had been less than 15 % and for the critical parameter the breakdown voltage of the collector - emitter V had been less than 2 %, which is sufficient for using the thermodynamic model for practical purposes.

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The analytical and finite-element methods for calculation of the frequency characteristics of resonant pressure sensors (RPS) have been considered. As a result of modeling an essential influence of dihedral angles in the areas of the resonant beam junction with the RPS elastic element on its characteristics has been found. The extent of the influence of the technological errors of the resonant beam geometrical parameters on the RPS frequency characteristics has been estimated.

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