Persons

The SOI field-effect Hall sensors are characterized by the enhanced functionality, but by low magnetic sensitivity. Therefore, the main task is to increase the magnetic sensitivity of such sensors. The results of the study on magnetically sensitive electric characteristics of SOI FEHS, obtained using the TCAD system, have been presented. The three-dimensional modeling of the device has been carried out. The calculated Hall-gate characteristics of SOI FEHS, confirming the previously proposed physical model of the sensor, in accordance with which under certain conditions of SOI FEHS functioning the area of the increased magnetic sensitivity appears, have been obtained. The influence of the doping concentration in the sensor channel on the magnetic sensitivity has been studied. It has been shown that the magnetic sensitivity of SOI FEHS is 3 times increased at the concentration of 10 cm. The extended dynamic range of the increased magnetic sensitivity area (more than 5 V) permits to increase the area of practical application of the sensor increasing the noise immunity. The obtained SOI FEHS characteristics are in good agreement with the parameters of the experimental device published earlier.

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For multi-factor analysis of instrument characteristics of the field-effect Hall sensor on the SOI structure (SOI FEHS), by means of the TCAD simulation, the calculation of the output and transfer characteristics of SOI FEHS) two-dimensional model has been performed. The two-dimensional distributions of electrons of electric field and the current density in the SOI FEHS channel have been obtained in three typical modes of the sensor operation - full depletion, partial depletion and saturation. The obtained results are in good agreement with the experimental data and confirm the physical model of SOI FEHS, described above, and specific features of the instrument operation in the partial depletion region, when the conductive channel in SOI FEHS body is formed.

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Previously, during investigation using the apparatus-technological simulation of SOI field-effect Hall sensor in the partial depletion mode an effect of its magnetic sensitivity has been discovered. In the work, in order to experimentally confirm the observed effect, the samples of SOI FEHS have been made and their parameters have been investigated in various modes of their operation. In order to improve the accuracy of measurements in the partial depletion mode the SOI FEHS design with a split drain has been used. The optimum load resistances of the bridge circuit have been determined. The analysis of the investigation of SOI FEHS samples has shown that in the mode of partial depletion, a peak of increased sensitivity has been observed. With the nominal load resistances of 1 MΩ and supply voltage of -9 V, the maximum magnitude of the magnetically induced signal increases by about 3 times in the mode of partial depletion versus full depletion. When recalculating the voltage difference across the load resistances DV to the magnetosensitivity, the magnetic sensitivity in the partial depletion mode can reach the values of 10 V/A·T, which is significantly higher than any known Hall semiconductor elements.

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Studies in the field of creating new structures of Hall sensors with improved characteristics, in particular with increased magnetics sensitivity, are very promising. In this study, we derive an analytical model that explains the features of Hall-gate characteristics and appearance of the area of high magnetics sensitivity of the SOI field-effect Hall sensor. The simulation results in the Synopsys Sentaurus TCAD confirm the analytical model proposed in this work. The proposed physical model explains the features of the Hall-gate characteristics of SOI FEHS in a wide range of gate voltages and allows us to conclude that the SOI FEHS has two working areas of operation and their choice is determined by the specific conditions of the sensor application. It is necessary to select the mode of partially depletion and enhancement to achieve maximum magnetics sensitivity. It is advisable to select a full enhancement mode to provide high noise immunity.

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