Studies in the field of creating new structures of Hall sensors with improved characteristics, in particular with increased magnetics sensitivity, are very promising. In this study, we derive an analytical model that explains the features of Hall-gate characteristics and appearance of the area of high magnetics sensitivity of the SOI field-effect Hall sensor. The simulation results in the Synopsys Sentaurus TCAD confirm the analytical model proposed in this work. The proposed physical model explains the features of the Hall-gate characteristics of SOI FEHS in a wide range of gate voltages and allows us to conclude that the SOI FEHS has two working areas of operation and their choice is determined by the specific conditions of the sensor application. It is necessary to select the mode of partially depletion and enhancement to achieve maximum magnetics sensitivity. It is advisable to select a full enhancement mode to provide high noise immunity.
1. Бараночников М.Л. Микромагнитоэлектроника. Т.1. – М.: ДМК Пресс, 2001. – 544 с.
2. Some features of magnetometric and sensor devices based on the field effect Hall sensor / M.L. Baranochnikov, A.V. Leonov, V.N. Mordkovich et al. // Advanced Electromagnetics Symposium: Proc. (Paris, France, 2012). – 2012. – P.455–459.
3. Полевой датчик Холла – новый тип преобразователя магнитного поля / В.Н. Мордкович, М.Л. Бараночников, А.В. Леонов и др. // Датчики и системы. – 2003. – Вып. 7. – С.33–38.
4. Королёв М.А., Козлов А.В., Петрунина С.С. Особенности функционирования полевого датчика Холла на основе КНИ структур, предназначенного для работы в телекоммуникационных сетях // Тр. МФТИ. – 2015. – Т. 7. – № 3 – С. 91–95.
5. Козлов А.В., Королёв М.А., Петрунина С.С. Математическое моделирование влияния концентрации примеси на ток стока КНИ полевого датчика Холла // Изв. вузов. Электроника. – 2015. – №4. – С. 377–381.