The use of the spin-diode effect in magnetic tunnel junctions under the current-induced transfer of spin angular momentum opens the prospect of the significant increase in the microwave sensitivity compared to Schottky semiconductor diodes in the GHz...
The practical application of the elliptical orbital model for calculation of the potential distribution between adjacent atoms will permit to determine the energy of the particles moving to the surface from space while depositing c -C films. The visu...
Unique properties of carbon nanotubes (CNTs) make them promising for creating composite electrode materials, based on the combination of CNTs with transition metals oxides. The influence of the RF plasma functionalization on vertically aligned carbon...
Plasma-enhanced CVD silicon nitride films SiN obtained from the gases of SiH and NH are widely used in microelectronics, micro- and nanoelectromechanical systems. For many applications, the residual mechanical stresses and composition of films are im...
The interest to self-timed circuit engineering is related to super-large integrated circuits. The degree of integration of transistors on a chip increases making millions of gates and at the same time their sizes decrease. Therefore, the circuits, pe...
The magnetic random-access memory has significant advantages over already existing memory types. The study of the magnetization-vector dynamics in the magnetic random-access memory (MRAM) using the Stoner - Wohlfahrth approximation is reduced to the ...
Studies in the field of creating new structures of Hall sensors with improved characteristics, in particular with increased magnetics sensitivity, are very promising. In this study, we derive an analytical model that explains the features of Hall-gat...
Currently polysilicon with high dopant concentration is used as a gate material in industrial manufacturing of MOST with the technological mode of up to 65 nm. The effects of quantization of inversion layer carriers in the substrate and of polysilico...
In positron emission tomography the number of factors, which distort the tomogram being obtained, exists. One of these factors is the solid angle fraction. Using the numeric simulation the influence of the solid angle fraction on the reconstruction q...
An approach to division into clusters of the objects on the IR-range images has been proposed. As the data for clustering a set of the key points-correspondences, obtained using the SIFT, SURF, ORB algorithms has been used. A typical object detection...
The process of plasma etching of the passivation SiN-SiO structure, which provides to obtain the etching anisotropic profile, has been developed. The influence of various operation parameters, such as the gas mixture consumption and HP power on the t...