The use of the spin-diode effect in magnetic tunnel junctions under the current-induced transfer of spin angular momentum opens the prospect of the significant increase in the microwave sensitivity compared to Schottky semiconductor diodes in the GHz frequency range. Theoretical analysis of diode rectification effect of the microwave signal in the magnetic tunnel junction (spin-diode effect) has been performed under resonant excitation of spin waves in the free magnetic layer as a result of the current-induced spin-transfer torque effect. Within the linear macrospin approximation the frequency characteristics of resonant response of the spin-torque diode on the microwave signal have been calculated depending on the direction and amplitude of the applied magnetic field and bias current. It has been shown that in absence of bias current the maximum value of the rectified DC bias voltage across the junction is achieved in the case of mutually perpendicular magnetization geometry in its magnetic layers and drops with increasing the resonant frequency of oscillations in the magnetic field while maintaining the equilibrium spin orientation in the layers. When applying the bias current the resonance amplitude of forced spin oscillations dramatically increases under the microwave excitation when approaching the critical point of spin state stability of the spin-torque diode, in which the linewidth is only limited by the nonlinear effects. The increase in the spin-torque diode sensitivity is very important for its application in the systems of microwave holographic vision.
-
Published in:
Fundamentalnye issledovaniya
-
Bibliography link:
Попков А.Ф., Кулагин Н.Е., Демин Г.Д., Звездин К.А. Полевые особенности микроволновой чувствительности спинового диода при наличии тока смещения // Изв. вузов. Электроника. - 2017. - Т.22. - №2. - С. 109-119. DOI: 10.24151/1561-5405-2017-22-2-109-119
1. Spin-torque diode effect in magnetic tunnel junctions / A.A. Tulapurkar, Y. Suzuki, A. Fukushima et al. // Nature. – 2005. – Vol. 438. – P. 339-342.
2. Highly sensitive nanoscale spin-torque diode / S. Miwa, S. Ishibashi, H. Tomita et al. // Nature Materials. – 2014. – Vol. 13. – P. 50–56.
3. Spin-torque diode-based radio-frequency detector by utilizing tilted fixed-layer magnetization and in-plane free-layer magnetization / T. Zeng, Y. Zhou, K.W. Lin et al. // IEEE Trans. Magn. – 2015. – Vol. 51. – N. 11. – P. 1401204.
4. Microwave holography using a magnetic tunnel junction based spintronic microwave sensor / L. Fu, Y. S. Gui, L. H. Bai et al. // J. Appl. Phys. – 2015. – Vol. 117. – P. 213902.
5. Sensitivity of spin-torque diodes for frequency-tunable resonant microwave detection / C. Wang, Y.T. Cui, J.Z. Sun et al. // J. Appl. Phys. – 2009. – Vol. 106. – P. 053905.
6. Voltage-induced ferromagnetic resonance in magnetic tunnel junctions / J. Zhu, J. A. Katine, G.E. Rowlands et al. // Phys. Rev. Lett. – 2012. – Vol. 108. – P. 197203.
7. Towards low-power high-efficiency rf and microwave energy harvesting / S. Hemour, Y. Zhao, C.H. P. Lorenz et al. // IEEE Trans. Microw. Theory Tech. – 2012. – Vol. 62. – N. 4. – P. 965–976.
8. Popkov A.F., Kulagin N.E., Demin G.D. Nonlinear spin-torque microwave resonance near the loss of spin state stability // Solid State Communications. – 2016. – Vol. 248. – P. 140–143.
9. Seebeck rectification enabled by intrinsic thermoelectrical coupling in magnetic tunneling junctions / Z.H. Zhang, Y.S. Gui, L. Fu et al. // Phys. Rev. Lett. – 2012. – Vol. 109. – P. 037206.
10. High sensitivity microwave detection using a magnetic tunnel junction in the absence of an external applied magnetic field / Y. S. Gui, Y. Xiao, L. H. Bai et al. // Appl. Phys. Lett. – 2015. – Vol. 106. – P. 152403.