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The calculation of characteristics of the MIS varicap with the charge transfer, designed to operate in control devices of SHF range, has been carried out. It has been shown that the limiting frequency of the device is at least 2 times higher as compared to the standard MIS varicap based on the MIS system with a thicker dielectric in the varicap with the charge transfer. The measurement methods of the device parameters of SHF range have been developed. The device samples based on thin substrates of monocrystalline silicon with the epitaxial layers have been produced. The correspondence of the varicap theoretical and experimental characteristics has been determined.

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A new type of the two-electrode MIS varicap - varicap with the charge transfer - has been proposed. It has been shown that in the device of the given type the negative effects, related to the processes of thermal generation and the accumulation of minority carriers, are absent, which enables to increase the limiting frequency and to improve the temperature stability of the varicap operation. Two device constructions have been considered. The experimentally measured characteristics of varicaps match the calculations results.

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