Persons

The voltage fluctuations in the nanometer-thick nickel thin films, arising during direct current passing through a films sample, have been studied in the process of slow thermal heating. It has been shown that the positive voltage surges are determined by the resistance increase in the local area of the investigated film due to its local thinning and the appearance of ruptures as a result of the melting process start. The melting process beginning temperature has been measured for the nanometer-thick nickel films on silicon oxide. For 5, 20 and 40-nm-thick Ni films the melting start temperatures are 740, 815 and 875 K, respectively.

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The method for fabrication of HEMTs, in which T-gate is formed using the nanoimprint lithography technology, has been presented. The characteristics of the created GaAs pHEMT transistors have been investigated. The developed transistor has the gate base length of 250 nm order and maximum transconductance over 350 mS/mm, the current-gain cutoff frequency ( f ) and maximum oscillation frequency ( f ) of 40 and 50 GHz, respectively.

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