The method for fabrication of HEMTs, in which T-gate is formed using the nanoimprint lithography technology, has been presented. The characteristics of the created GaAs pHEMT transistors have been investigated. The developed transistor has the gate base length of 250 nm order and maximum transconductance over 350 mS/mm, the current-gain cutoff frequency ( f ) and maximum oscillation frequency ( f ) of 40 and 50 GHz, respectively.
Литература
1. Бобрешов A.M., Хребтов И.В. Аналитическая модель для субмикронных HEMT-транзисторов с учетом короткоканальных эффектов // Изв. вузов. Электроника. – 2005. – № 3. – C. 14–21.
2. Dyakonov M., Shur M. Detection, mixing, and frequency multiplication of terahertz radi-ation by two-dimensional electronic fluid // IEEE Trans. Electron Dev. – 1996. – Vol. 43. – Is. 3. – P. 380–387.
3. Peng C., Liang X., Chou S.Y. A novel method for fabricating sub-16 nm footprint T-gate nanoimprint molds // Nanotechnology. – 2009. – Vol. 20. – P. 1–3.
4. Fabrication of high electron mobility transistors with T-gates by nanoimprint lithography / Y. Chen, D. Macintyre, E. Boyd et al. // J. Vac. Sci. Technol. B. –2002. – Vol. 20(6). – P. 2887–2890.
5. Schift H. Nanoimprint Lithography: An old story in modern times? A review // J. Vac. Sci. Technol. – 2008. – Vol. 26 (2). – P. 458–480.
6. Improving stamps for 10 nm level wafer scale nanoimprint lithography / M. Beck, M. Graczyk, I. Maximov et al. // Microelectron. Eng. – 2002. – № 61–62. – P. 441–448.
7. Fabrication of a hard mask for InP based photonic crystals: increasing the plasma-etch se-lectivity of poly(methyl methacrylat) versus SiO2 and SiNx / R. Wüest, P. Strasser, F. Robin et al. // J. Vac. Sci. Technol. – 2005. – Vol. 23 (6). – P. 3197–3201.
8. http://www.triquint.com/products/p/TGF2018
9. Dechun G., Kankan Q., Junfeng C., Xiaobin L. A simulation about the influence of the gate-source-drain distance on the AlGaN/GaN HEMT performance at Ka-band // Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications (IMWS). – 2012. – P. 1–4.