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On the samples of SEF wafers it has been shown that the thickness of oxide films and the surface oxidation conditions demonstrate strong effect upon the electron work function (EWF), measured under atmospheric conditions by technique of the static condenser with the ionized space. The EWF changes are connected with the water sorbed vapors, the quantity of which is determined by the oxide film structure and properties. It has been found that the EWF changes depending on the oxide film type can achieve ~ 20%.
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One of the plausible circuit engineering solutions for the capacitive accelerometers with the differential type sensing element has been considered. The test results of the prototype on a specialized stand have been presented.
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The equations for estimation of the true leak rate for the hermiticity testing of microelectronic devices and MEMS have been proposed.
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Two approaches used for justifying the reliability models - the physical-probabilistic and physical-statistical ones - have been considered. The equivalence of both approaches has been shown. Using the methods of individual forecasting, the assessment of the probability of the non-failure operation of the linear acceleration converter (PLD) sample using both methods has been made and it has given the same results.
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