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The study results of the formation of polysilicon elements with the complex relief in the form of silicon islands in the structure of silicon-on insulator (SOI) have been presented. The optimal technological parameters of the process have been defined and the physical-chemical mechanisms, determining them, have been described. A new concept of the polysilicon plasma etching process organization under conditions of the developed complicated relief has been offered. The process of the reactive ion etching of the polysilicon elements in formation of the structure schemes with the increased radiation resistance, such as SOI, has been developed and optimized.

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