Persons
Article author
- Counter: 460 | Comments : 0
- Counter: 309 | Comments : 0
- Counter: 115 | Comments : 0
- Counter: 1308 | Comments : 0
The trends in development of the scientific-educational programs in designing microelectronic devices have been considered, and the significance of involving students and PhD. post-graduates in scientific projects has been underlined. The problems of the standard cell libraries development have been investigated, the automation approaches based on the parametric cells and the application of the optimization methods have been proposed. The prototype of the inverter standard cell, created in accordance with the above theoretical basis, has been presented.
- Counter: 316 | Comments : 0
A new method for determining the electromigration parameters - the activation energy and the current density exponent has been proposed. The multilayer conductors TiN/Al-Si(1%)/TiN for the tests with SiO passivation layer have been used. The method permits to accelerate and to reduce the price of electromigration tests due to the lack of need for packing the samples and for using the high temperature climatic chambers.
- Counter: 1475 | Comments : 0
The process of plasma etching of the passivation SiN-SiO structure, which provides to obtain the etching anisotropic profile, has been developed. The influence of various operation parameters, such as the gas mixture consumption and HP power on the technological characteristics of the plasma etching process of silicon nitride and oxide dielectric layers, has been considered. The correlation of the main technological characteristics of this process with the operation parameters has been determined.
- Counter: 1596 | Comments : 0