Izvestiya Vysshikh Uchebnykh Zavedenii. Elektronika home

Publication of the journal

The section is currently being updated

With the IC elements transition to critical size region of less than 100 nm, two-dimensional shapes of element structures manufactured during fabrication cycle are changed to three-dimensional complex shapes. These are different gate structures of MOS transistors, oxide and nitride photolithography masks, “fin” gate transistors (FinFET), gate-all-around transistors (GAAFET) and others. Process validation, besides requirements to critical sizes of elements in the two-dimensional plane, also includes requirements to precision of full profile measurements. Despite the wide variety of currently developed linear dimensions and surface profile measurement techniques, not all of them can be applied to three-dimensional profile control of fabricated structures. In this work, based on literature data analysis the features of widely used techniques for measurement of linear sizes and topology elements are displayed, and the difficulties in employing them to control a three-dimensional profile are elicited. The promising measurement techniques currently being introduced in the IC fabrication have been considered.

Key words: process control, scanning electron microscopy, SEM, transmission electron microscopy, TEM, atomic force microscopy, AFM, scatterometry, critical dimensions
Published in: Technological processes and routes
Bibliography link: Nelyubin I. V., Putrya M. G. Features of three-dimensional profile control of elements and structures of nanoscaled ICs. Review. Proc. Univ. Electronics, 2023, vol. 28, no. 3, pp. 298–325. https://doi.org/ 10.24151/1561-5405-2023-28-3-298-325. – EDN: UXRFJC.

Ilya V. Nelyubin
National Research University of Electronic Technology, Russia, 124498, Russia, Moscow, Zelenograd, Shokin sq., 1

Michail G. Putrya
National Research University of Electronic Technology, Russia, 124498, Russia, Moscow, Zelenograd, Shokin sq., 1

1. Pham D., Larson L., Yang J.-W. FinFET device junction formation challenges // 2006 International Workshop on Junction Technology. Shanghai: IEEE, 2006. P. 73–77. https://doi.org/10.1109/IWJT.2006.220864

2. Metrology capabilities and needs for 7 nm and 5 nm logic nodes / B. Bunday, E. Solecky, A. Vaid et al. // Proc. SPIE. Metrology, Inspection, and Process Control for Microlithography XXXI. 2017. Vol. 10145. Art. ID: 101450G. https://doi.org/10.1117/12.2260870

3. Ionizing radiation damage in 65 nm CMOS technology: Influence of geometry, bias and temperature at ultra-high doses / G. Borghello, E. Lerario, F. Faccio et al. // Microelectronics Reliability. 2021. Vol. 116. Art. No. 114016. https://doi.org/10.1016/j.microrel.2020.114016

4. Gaps analysis for CD metrology beyond the 22 nm node / B. Bunday, Th. A. Germer, V. Vartanian et al. // Proc. SPIE. Metrology, Inspection, and Process Control for Microlithography XXVII. 2013. Vol. 8681. Art. ID: 86813B. https://doi.org/10.1117/12.2012472

5. Герасименко Н., Волоховский А., Запорожан О. Особенности контроля технологии кремниевых наноструктур // Наноиндустрия. 2017. № 5 (76). С. 36–51. https://doi.org/10.22184/1993-8578.2017.76.5.36.51
Gerasimenko N., Volokhovsky A., Zaporozhan O. Features of control of silicon nanostructures technology. Nanoindustriya = Nanoindustry, 2017, no. 5 (76), pp. 36–51. (In Russian). https://doi.org/10.22184/1993-8578.2017.76.5.36.51

6. Ukraintsev V. A., Baum Ch., Zhang G., Hall C. L. The role of AFM in semiconductor technology development: The 65 nm technology node and beyond // Proc. SPIE. Metrology, Inspection, and Process Control for Microlithography XIX. 2005. Vol. 5752. Art. ID: 602758. https://doi.org/10.1117/12.602758

7. Development of a 3D-AFM for true 3D measurements of nanostructures / G. Dai, W. Häßler-Grohne, D. Hüser et al. // Meas. Sci. Technol. 2011. Vol. 22. No. 9. Art. No. 094009. https://doi.org/10.1088/0957-0233/22/9/094009

8. Макушин М. В. Скаттерометрия и перспективные полупроводниковые технологии // Электроника: Наука, технология, бизнес. 2021. № 6 (207). С. 44–53. https://doi.org/10.22184/1992-4178.2021.207.6.44.53
Makushin M. Scatterometry and advanced semiconductor technologies. Elektronika: Nauka, tekhnologiya, biznes = Electronics: Science, Technology, Business, 2021, no. 6 (207), pp. 44–53. (In Russian). https://doi.org/10.22184/1992-4178.2021.207.6.44.53

9. Кузин А. Ю., Марютин В. Н., Календин В. В. Методы и средства измерений линейных размеров в нанометровом диапазоне // Микросистемная техника. 2001. № 4. С. 9–19. EDN HOIBUT.
Kuzin A. Iu., Mariutin V. N., Kalendin V. V. Methods and means of linear sizes dimensions in nanometer range. Mikrosistemnaya tekhnika = Microsystems Engineering, 2001, no. 4, pp. 9–19. (In Russian).

10. Metrology challenges in 3D NAND flash technical development and manufacturing / W. Zhang, J. Xu, S. Wang et al. // J. Microelectron. Manuf. 2020. Vol. 3. No. 1. P. 1–8. https://doi.org/10.33079/jomm.20030102

11. Resist shrink characterization methodology for more accurate CD metrology / M. A. Breton, K. Petrillo, J. Church et al. // Proc. SPIE. Metrology, Inspection, and Process Control XXXVI. 2022. Vol. PC12053. Art. ID: PC120530C. https://doi.org/10.1117/12.2614219

12. Time-dependent electron-beam-induced photoresist shrinkage effects / B. D. Bunday, A. Cordes, C. Hartig et al. // Journal of Micro/Nanolithography, MEMS, and MOEMS. 2012. Vol. 11. Iss. 2. Art. No. 023007. https://doi.org/10.1117/1.JMM.11.2.023007

13. Mechanism of ArF resist-pattern shrinkage in critical-dimension scanning electron microscopy measurement / T. Azuma, K. Chiba, H. Abe et al. // J. Vac. Sci. Technol. B. 2004. Vol. 22. Iss. 1. P. 226–230. https://doi.org/10.1116/1.1643055

14. 193-nm resist: Ultralow voltage CD-SEM performance for sub-130-nm contact hole process / J. E. Ferri, M. Vieira, M. Reybrouck et al. // Proc. SPIE. Metrology, Inspection, and Process Control for Microlithography XVII. 2003. Vol. 5038. Art. ID: 487597. https://doi.org/10.1117/12.487597

15. Sundaram G., Sullivan N. T., Mai T., Ke Ch.-M. Low-impact resist metrology: The use of ultralow voltage for high-accuracy performance // Proc. SPIE. Metrology, Inspection, and Process Control for Microlithography XVIII. 2004. Vol. 5375. Art. ID: 539221. https://doi.org/10.1117/12.539221

16. Sundaram G., Lee B.-H., Mai T., Sullivan N. T. Minimizing the impact of image icquisition on CD-SEM LER/LWR measurements // Proc. SPIE. Metrology, Inspection, and Process Control for Microlithography XIX. 2005. Vol. 5752. Art. ID: 601090. https://doi.org/10.1117/12.601090

17. Experiment and simulation of charging effects in SEM / S. Babin, S. Borisov, Y. Miyano et al. // Proc. SPIE. Metrology, Inspection, and Process Control for Microlithography XXII. 2008. Vol. 6922. Art. ID: 692219. https://doi.org/10.1117/12.772255

18. Novel three dimensional (3D) CD-SEM profile measurements / W. Ito, B. Bunday, S. Harada et al. // Proc. SPIE. Metrology, Inspection, and Process Control for Microlithography XXVIII. 2014. Vol. 9050. Art. ID: 90500D. https://doi.org/10.1117/12.2047374

19. Amplitude and spatial frequency characterization of line-edge roughness using CD-SEM / G. Eytan, O. Dror, L. Ithier et al. // Proc. SPIE. Metrology, Inspection, and Process Control for Microlithography XVI. 2002. Vol. 4689. Art. ID: 473473. https://doi.org/10.1117/12.473473

20. Marschner T., Stief C. Characterization of 193-nm resist layers by CD-SEM sidewall imaging // Proc. SPIE. Metrology, Inspection, and Process Control for Microlithography XVII. 2003. Vol. 5038. Art. ID: 482808. https://doi.org/10.1117/12.482808

21. Nasu O., Sasada K., Ikeda M., Ezumi M. New CD-SEM system for 100-nm node process // Hitachi Review. 2002. Vol. 51. No. 4. P. 125–129.

22. Monahan K. M., MacNaughton C., Waiman Ng, Quattrini R. A systems approach to gate CD control: Metrology, throughput, and OEE // 1997 IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings (Cat. No. 97CH36023). San Francisco, CA: IEEE, 1997. P. B53–B57. https://doi.org/ 10.1109/ISSM.1997.664510

23. Metrology for the next generation of semiconductor devices / N. G. Orji, M. Badaroglu, B. M. Barnes et al. // Nat. Electron. 2018. Vol. 1. No. 10. P. 532–547. https://doi.org/10.1038/s41928-018-0150-9

24. Keller N., Liu Zh. Metrology solutions for gate-all-around transistors in high volume manufacturing // Semiconductor Digest Magazine. 2020. Vol. 2. No. 5. P. 24–28.

25. Binnig G., Quate C. F., Gerber Ch. Atomic force microscope // Phys. Rev. Lett. 1986. Vol. 56. Iss. 9. P. 930–933. https://doi.org/10.1103/PhysRevLett.56.930

26. Парфенов В. А., Юдин И. А. Атомно-силовая микроскопия и ее применения в науке, технике и реставрации // Изв. СПбГЭТУ «ЛЭТИ». 2015. № 9. С. 61–70. EDN UZCATX.
Parfenov V. A., Yudin I. A. Atomic force microscopy and its application in science, engineering and restoration. Izv. SPbGETU “LETI” = Proceedings of Saint Petersburg Electrotechnical University, 2015, no. 9, pp. 61–70. (In Russian).

27. Improved etch and CMP process control using in-line AFM / T. Trenkler, T. Kraiss, U. Mantz et al. // Proc. SPIE. Metrology, Inspection, and Process Control for Microlithography XVIII. 2004. Vol. 5375. Art. ID: 535967. https://doi.org/10.1117/12.535967

28. Трапашко Г. А. Калибровка установок измерений размеров элементов микроэлектронных структур // Наука и техника. 2012. № 4. С. 22–30. EDN TORETB.
Trapashko G. Calibration of devices for measuring elements of micro-electronic structures. Nauka i tekhnika = Science and Technique, 2012, no. 4, pp. 22–30. (In Russian).

29. Быков В. А. Микромеханика для сканирующей зондовой микроскопии и нанотехнологии // Микросистемная техника. 2000. № 1. С. 21–33. EDN HOHZFV.
Bykov V. A. Micromechanics for scanning probe microscopy and nanotechnology. Mikrosistemnaya tekhnika = Microsystems Engineering, 2000, no. 1, pp. 21–33. (In Russian).

30. Kado H., Yokoyama K., Tohda T. A novel ZnO whisker tip for atomic force microscopy // Ultramicroscopy. 1992. Vol. 42–44. P. 1659–1663. https://doi.org/10.1016/0304-3991(92)90501-A

31. Kado H., Yamamoto Sh., Yokoyama K., Tohda T. Observation of contact holes by atomic force microscopy with a ZnO whisker tip // Journal of Applied Physics. 1993. Vol. 74. Iss. 7. P. 4354–4356. https://doi.org/10.1063/1.355313

32. Advancement in fabrication of carbon nanotube tip for atomic force microscope using multi-axis nanomanipulator in scanning electron microscope / S. K. Kanth, A. Sharma, B. C. Park et al. // Nanotechnology. 2022. Vol. 33. No. 17. Art. No. 175703. https://doi.org/10.1088/1361-6528/ac4a2b

33. New three-dimensional AFM for CD measurement and sidewall characterization / Y. Hua, C. Buenviaje-Coggins, Y. Lee et al. // Proc. SPIE. Metrology, Inspection, and Process Control for Microlithography XXV. 2011. Vol. 7971. Art. ID: 797118. https://doi.org/10.1117/12.879545

34. Introduction of next-generation 3D AFM for advanced process control / J. Foucher, R. Thérèse, Y. Lee et al. // Proc. SPIE. Metrology, Inspection, and Process Control for Microlithography XXVII. 2013. Vol. 8681. Art. ID: 868106. https://doi.org/10.1117/12.2011463

35. Recent CD AFM probe developments for sub-45 nm technology nodes / H.-C. Liu, J. R. Osborne, G. A. Dahlen et al. // Proc. SPIE. Metrology, Inspection, and Process Control for Microlithography XXII. 2008. Vol. 6922. Art. ID: 69222J. https://doi.org/10.1117/12.773057

36. Chen X., Liu S. Optical scatterometry for nanostructure metrology // Metrology / ed. W. Gao. Singapore: Springer Nature, 2019. P. 477–513. https://doi.org/10.1007/978-981-10-4938-5_17

37. Beklemishev N. N., Benevolenskii S. B., Istomina N. L., Kopylov P. V. Improvement of the accuracy of diffraction measurements of circuit feature sizes // Russ. Microelectron. 1998. Vol. 27. Iss. 6. P. 386–388.

38. Implementation of spectroscopic critical dimension (SCD) (TM) for gate CD control and stepper characterization / J. A. Allgair, D. C. Benoit, M. Drew (Jr.) et al. // Proc. SPIE. Metrology, Inspection, and Process Control for Microlithography XV. 2001. Vol. 4344. Art. ID: 436771. https://doi.org/10.1117/12.436771

39. Nondestructive analysis of lithographic patterns with natural line edge roughness from Mueller matrix ellipsometric data / X. Chen, Y. Shi, H. Jiang et al. // Applied Surface Science. 2016. Vol. 388. P. 524–530. https://doi.org/10.1016/j.apsusc.2015.10.167

40. Fast and accurate scatterometry metrology method for STI CMP step height process evaluation / C.-H. Lin, C. Huang, C.-L. Hsu et al. // Proc. SPIE. Metrology, Inspection, and Process Control for Microlithography XXVI. 2012. Vol. 8324. Art. ID: 832421. https://doi.org/10.1117/12.916235

41. High speed optical metrology solution for after etch process monitoring and control / A.-L. Charley, Ph. Leray, W. Pypen et al. // Proc. SPIE. Metrology, Inspection, and Process Control for Microlithography XXVIII. 2014. Vol. 9050. Art. ID: 90501H. https://doi.org/10.1117/12.2047280

42. Metrology characterization of spacer double patterning by scatterometry / P. Dasari, J. Li, J. Hu et al. // Proc. SPIE. Metrology, Inspection, and Process Control for Microlithography XXV. 2011. Vol. 7971. Art. ID: 797111. https://doi.org/10.1117/12.879900

43. Advanced EUV resist characterization using scatterometry and machine learning / D. Schmidt, K. Petrillo, M. Breton et al. // 2021 32nd Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC). Milpitas, CA: IEEE, 2021. P. 1–4. https://doi.org/10.1109/ASMC51741.2021.9435698

44. El Kodadi M., Soulan S., Besacier M., Schiavone P. Real time scatterometry for profile control during resist trimming process // J. Vac. Sci. Technol. B. 2009. Vol. 27. Iss. 6. P. 3232–3237. https://doi.org/10.1116/1.3256594

45. Multiparameter grating metrology using optical scatterometry / Ch. J. Raymond, M. R. Murnane, S. L. Prins et al. // J. Vac. Sci. Technol. B. 1997. Vol. 15. Iss. 2. P. 361–368. https://doi.org/10.1116/1.589320

46. Buckner B. D., Hirleman E. D. Deep-ultraviolet scatterometry for nanoparticle detection // Proc. SPIE. Process Control and Diagnostics. 2000. Vol. 4182. Art. ID: 410083. https://doi.org/10.1117/12.410083

47. Ito Y., Higuchi A., Omote K. Characterization of cross-sectional profile of resist L/S and hole pattern using CD-SAXS // Proc. SPIE. Metrology, Inspection, and Process Control for Microlithography XXX. 2016. Vol. 9778. Art. ID: 97780L. https://doi.org/10.1117/12.2218983

48. Nonplanar high-k dielectric thickness measurements using CD-SAXS / C. Wang, K.-W. Choi, Y.-C. Chen et al. // Proc. SPIE. Metrology, Inspection, and Process Control for Microlithography XXIII. 2009. Vol. 7272. Art. ID: 72722M. https://doi.org/10.1117/12.813757

49. Pattern fidelity in nanoimprinted films using CD-SAXS / R. L. Jones, Ch. L. Soles, E. K. Lin et al. // Proc. SPIE. Emerging Lithographic Technologies IX. 2005. Vol. 5751. Art. ID: 600267. https://doi.org/10.1117/ 12.600267

50. A holistic metrology approach: Hybrid metrology utilizing scatterometry, CD-AFM, and CD-SEM / A. Vaid, B. B. Yan, Y. T. Jiang et al. // Proc. SPIE. Metrology, Inspection, and Process Control for Microlithography XXV. 2011. Vol. 7971. Art. ID: 797103. https://doi.org/10.1117/12.881632

Information about the publication

Downloads: 0

UDK: 53.082.55:620.187(048.8)
Publication type: Review article
Source lang: Russian
DOI: 10.24151/1561-5405-2023-28-3-298-325
RISC id: UXRFJC

Download: File not found (1.84 Mb) JATS XML