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The results of the development of technologies for magnetic semiconductor chips based on thin-film magnetoresistive multilayer nanostructures are presented. A brief overview of the main achievements in the field of magnetometric devices based on anisotropic and giant magnetoresistive effect is made.
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The beta-voltaic batteries based on the direct energy conversion silicon p - i - n diodes, irradiated by high-energy electrons, which are formed by the tritium decay Ni and C, have been studied. The use of identical diodes has allowed comparing the quality of these batteries with different isotopes. It has been shown that previously not applied isotope C, though high half-life permits to create the power sources with the high efficiency and internal quantum yield in production of electron-hole pairs.
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