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The dependence of thermal characteristics of a tvs-diode in passing the pulsed overload has been investigated. The dependencies of the pulsed voltage limitations and current on time have been analyzed. Based on the analysis of the dependencies the thermal characteristics of tvs-diodes have been calculated. It has been shown that the parameters of the tvs-diode degrade, when the current density achieves 160 - 300 A/cm and the critical temperature - 250 - 300 °C. The dependencies of the heat resistance and the critical temperature on the voltage tvs-diodes density and pulse duration have been presented.
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The mechanisms of formation of the amplitude value of the electronic component of the total current through the BISPIN-device in various modes of pulsation have been considered. The results of the experimental and theoretical investigations of the electronic component of the current through the structure of supply voltage and the load resistance have been presented. A theoretical model explaining the observed dependencies has been offered. A good agreement of the calculated and experimental results has been achieved.
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