Persons

The method of the multiparameter measurements of characteristics of semiconductor structures: the electrical conductivity of the n-layer, which acts as a substrate of the semiconductor structure, the thickness and conductivity of the highly doped epitaxial n-layer, has been proposed. The method is based on using the one-dimensional microwave photonic crystal with the periodicity defect, which contains the investigated semiconductor structure. The characteristics, measured by this method, of epitaxial arsenide-gallium structures, consisting of the epitaxial layer and semi-isolating substrate, have been presented.

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The impact of continuous midrange power microwave fields on the characteristics of the square-wave RC -generator with the multi-channel buffer circuit and matching circuit, formed on the 74HC14 series inverters with the built-in Schmitt trigger, has been investigated. It has been shown that the increasing power of electromagnetic radiation reduces the pulse width and, hence, increases the frequency of the RC -generator output signal. The RC -generator output signal sensitivity to the impact of the microwave signal is decreased with an increase of both, the supply voltage and the microwave signal power. It has been concluded that the output characteristics of the digital radioelectronic systems are the most susceptible to the impact of the microwave signal while using the semiconductor integrated circuits, which are part of these systems, as the active elements and while choosing the operation modes of DC voltage circuits, significantly different from nominal ones.

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