Persons

The high-speed broadband analog integrated circuits based on the complimentary bipolar technology are widely used in modern equipment. The speed of such circuits is directly related to the boundary frequency of the transistors used. Some modern approaches to development of the complimentary bipolar technologies, providing the high performance of the designed integrated circuits and systems on a chip, have been considered. With the help of CAD software TCAD the device-technological modeling of the element basis has been carried out. The technological route for manufacturing an operational amplifier by the high-speed complimentary technology with a self-compliant emitter-base note, based on two layers of polysilicon, has been developed. To ensure the self-alignment of the base and emitter layers of polysilicon in manufacture of the NPN and PNP transistors with formation of an L-shaped nitride spacer has been used. The side insulation of the components has been accomplished by narrow vertical slits lined with oxide and silicon nitride and filled with polysilicon. The developed technological manufacturing route has permitted to reach the boundary frequency of the NPN and PNP transistors on a single crystal of 8-10 GHz with the breakdown voltages of the collector-emitter of more than 10 V. To a large extent the problem of the complementarity of bipolar transistors has been solved. In future this will give the possibility to create a new class of domestic broadband and high-speed analog-digital integrated circuits and to provide the technological independence of the Russian Federation.

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To increase the functioning operating range of CMOS LSI, designed according to the radiation-resistant technology SOS, an increase of the breakdown voltages pf the N-channel MOS transistors is required. The results of the construction modernization and that one of the technological route of formation of N-MOS transistors with an improved breakdown voltage, obtained by means of the device-technological modeling TCAD Synopsys, have been presented.

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