Persons

The surface graphitization kinetics via dissociative evaporation of silicon carbide in vacuum under exposure to the scanning heat source has been investigated. The developed model of the process enables to calculate the formation dynamics and the number of the residual carbon atomic layers. The stoichiometric coefficient, which minimizes the grapheme structure deficiency, has been optimized in terms of the sublimation temperature θ = 1/η (). The suggested model might be the basic technology for obtaining graphene.

• Counter: 1163 | Comments : 0

The model of microtriode with emitting surface in the form of the graphitized silicon carbide flat line has been proposed. The electric field distribution in the interelectrode space of the microtriode has been found by the conformal mapping method. The optimal geometric parameters of microtriode, corresponding to large amount and good handling of the field emission current have been determined. The current-voltage characteristics have been plotted and the device parameters have been calculated. The device elements stability has been estimated.

• Counter: 1218 | Comments : 0