The surface graphitization kinetics via dissociative evaporation of silicon carbide in vacuum under exposure to the scanning heat source has been investigated. The developed model of the process enables to calculate the formation dynamics and the number of the residual carbon atomic layers. The stoichiometric coefficient, which minimizes the grapheme structure deficiency, has been optimized in terms of the sublimation temperature θ = 1/η (). The suggested model might be the basic technology for obtaining graphene.