Persons

The surface of silicon on sapphire (SOS) epitaxial layers have been investigated by the atomic-force and UV scattering methods. The X-Ray-structural analysis of SOS has been performed. The transient area silicon-sapphire has been studied by photo-EMF method. The problem of accumulating the silicon synthesis secondary products has been considered and experimentally confirmed. It has been found that the addition of the chlorides containing reagents into the epitaxy process permits to exclude the influence of these products on the growing layer and, also, to modify the surface microrelief. The studies on the SOS surface and layers structure have enabled to determine that the growth of films is realized according to the Stranski-Krastanov mechanism. It has been shown that the combined method contained in the preliminary growing of the SOS layer of 30-60 nm thickness from pure SiH and further layer growing with the ratio of gas components consumptions 2SiH:1SiC1 is a more preferable method of manufacturing SOS with the layer thickness from 300 nm and more.

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The process of the film oxidation of graphene, containing one and several layers, under the influence of UV irradiation structure in water vapor has been investigated. The regularity has been revealed and the difference in topography variation, as well as in the optical properties of grapheme, having a different number of layers, has been demonstrated. The possibility of the surface functionalization with modification of the energy structure of graphene has been revealed. The differences in the mechanisms of UFO oxidation of monolayer, multilayer and few-layered graphene have been analyzed. The correlation of the topographic defects of the graphene material properties and of the structural defects, observed on Raman scattering of light spectra, has been demonstrated.

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The processes of creating the narrow-spectrum photosensitive structures have been investigated. Two technological approaches based on the J-aggregates of cyanine dyes have been proposed: the electro-kinetic deposition of single J-aggregates in the planar configuration of electrodes and the creation of the multi-layer structures with the photosensitive layer from the film of the cyanine dye J-aggregates and transparent electrode from the conductive carbon nanotube network on the flexible substrate of polyethylene phthalate.

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