Persons

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Today, both macromodels and transistor-level models of semiconductor integrated circuits are available. However, most models don’t take into account the influence of destabilizing effects. Thus, the tasks of developing new models and fitting the parameters of existing ones are very relevant. In this work, the authors introduced an assumption about the existence of a correlation relationship between all the parameters of integrated circuits’ transistor-level models and offered a way to fit these parameters. The experience of fitting the model’s parameters of the integrated circuit 1564LE1 EP was presented. To simplify this task, all parameters were altered by the same relative deviation. To check the assumption made, the authors carried out full-scale experiment, in which the frequency of the self-oscillation of the ring oscillator based on the 1564LE1 EP was measured in the temperature range. The simulation of the ring oscillator has been made using a SPICE-simulator. The dependences of the self-oscillation frequency on temperature, obtained as a result of simulation and as a result of experiment, were compared before and after fitting the parameters of the integrated circuit model. Also, the waveforms of the ring oscillator based on the original and fitted model were compared. The analysis of the obtained dependences of the frequency of oscillations, the signal shape before and after the model fitting, the link to the text of the fitted model has been provided. The results obtained show the possibility of using the introduced assumption to fit the parameters of the transistor-level integrated circuit model.

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For ensuring the efficiency of the semiconductor electronic component base for apparatus, responsible for application, an optimal combination of statistical (group) and physical-technological (individual) reliability assessments is required. In the paper a thermodynamic approach, based on the deep-level transient spectroscopy in semiconductors promising means of individual rejection of potentially unreliable electronic component base has been proposed. For transistors and integrated circuits, the dependences of the amplitude of capacitance transient, caused by the bulk and surface defects of various nature on the repetition rate of electric filling pulses of deep levels, have been obtained. For multi-pin CMOS IC, the two-pole connection schemes to the spectrometer have been proposed. The obtained dependences show individual differences of studied specimens of various manufacturers as well as individual specimens from the same production batch. The performed studies have shown the promises of using the methods of the relaxation spectroscopy of deep level as the means of additional quality control of semiconductor devices and CMOS microcircuits both in the production process and in rejection of the items with potential defects, not specified by the project of engineering defect formation.

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