For ensuring the efficiency of the semiconductor electronic component base for apparatus, responsible for application, an optimal combination of statistical (group) and physical-technological (individual) reliability assessments is required. In the paper a thermodynamic approach, based on the deep-level transient spectroscopy in semiconductors promising means of individual rejection of potentially unreliable electronic component base has been proposed. For transistors and integrated circuits, the dependences of the amplitude of capacitance transient, caused by the bulk and surface defects of various nature on the repetition rate of electric filling pulses of deep levels, have been obtained. For multi-pin CMOS IC, the two-pole connection schemes to the spectrometer have been proposed. The obtained dependences show individual differences of studied specimens of various manufacturers as well as individual specimens from the same production batch. The performed studies have shown the promises of using the methods of the relaxation spectroscopy of deep level as the means of additional quality control of semiconductor devices and CMOS microcircuits both in the production process and in rejection of the items with potential defects, not specified by the project of engineering defect formation.
1. Lang D.V. Deep level transient spectroscopy: A new method to characterize traps in semiconductors // J. of Applied Physics. 1974. Vol. 45. No 7. P.3023–3032.
2. ASTM F 978-02 Standard test method for characterizing semiconductor deep levels by transient capacitance
techniques // Annual Book of ASTM Standards. 2002. Vol. 10.05. P. 489–496.
3. Берман Л.С., Лебедев А.А. Емкостная спектроскопия глубоких центров в полупроводниках. Л.: Наука, 1981. 176 с.
4. Литвинов В.Г., Гудзев В.В., Милованова О.А., Рыбин Н.Б. Релаксационная спектроскопия глубоких уровней и ее применение для исследования полупроводниковых структур микро- и наноэлектроники // Датчики и системы. 2009. № 9. С. 71–78.
5. Крылов В.П. Квалигенетика полупроводниковой ЭКБ: фантастика или необходимость? Некоторые аспекты обеспечения качества полупроводниковой ЭКБ // Электронные компоненты. 2015. № 10. С. 22–25.
6. Ma Y., Xu P., Guanetal M. Analysis of deep level defects in bipolar junction transistor sirradiated by 2 MeV
electrons // Microelectronics Reliability. 2017. Vol. 79. P. 149–152.
7. Li X., Yang J., Liu Ch. Evolution of activation energy of interface traps in LPNP transistors characterized by deep-level transient spectroscopy // IEEE Transactions on Nuclear Science. 2017. Vol. 64. No. 7. P. 1905–1911.
8. Крылов В.П., Богачев А.М., Пронин Т.Ю. Релаксационная спектроскопия глубоких уровней и неразрушающий контроль потенциальных дефектов полупроводниковой электронной компонентной базы // Радиопромышленность. 2019. Т. 29. № 2. C.35–44.
9. Чернышев А.А. Основы надежности полупроводниковых приборов и интегральных микросхем. М.: Радио и связь, 1988. 256 с.