Persons

The researches directed at the correlation revealing between the radhard integrated circuits technological process instability and their radiating sensitivity have been carried out. The influence of the epilayer thickness and conductivity, the active area doping and the initial heterostructures parameters on the IC's radiation sensitivity has been considered.

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The basic technology of the microelectronic devices radiation hardness prediction, estimation and measurement, which had proved the high scientific and practical value for all of design and production stages of special devices, has been described. The major directions to spread the basic technology sphere to space applications and modern microelectronic devices have been proposed.

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The results of the development and studies on the focal plane array (FPA) of the format 320x240 on the PtSi basis have been presented. The development has been executed based on the CMOS technology. The spectral range is 3 - 5 µm. The main frame frequency is 25 Hz. It has been shown that FPA posses the possibility of regulating the time of the current accumulation at fixed frame frequency and the possibility of subtracting the background forming constant in the output device.

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The CMOS SOI technology is perspective for creating variety nomenclature of radio-frequency (RF) analog-digital transceiver integrated circuits, including hardware. Testing results of designing and studies for the library RF elements and the set of the functional blocks designed to domestic CMOS SOI 180 nm technology have been presented. The library of the elements includes the RF n-channel MOSFETs with the cut-off frequency up to 30 GHz, MOSFET based varactors, spiral inductors, MIM capacitors, resistors and RF transceiver IP-blocks, such as amplifiers, voltage control oscillators, frequency dividers with the operating frequencies in the range from 0.1 to 4 GHz. The resistance of the IP-blocks hardness to the total ionizing dose exposure is not less than 3 · 10 au. No SEL or catastrophic failures were observed under the impact of heavy charged particles with the linear energy transfer up to 80 MeV·cm/mg. The study results have confirmed the possibility to create the transceiver ICs for the space applications with the working frequencies up to 3 GHz 180 nm CMOS SOI technology.

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The traditional approaches to the circuit simulation of the single-event effects in CMOS ICs are based on the use of the double-exponential model of ionization current pulse, which is not always applicable to devices with the sub-100 nm feature sizes. An overview of the main approaches to solving two main problems, arising in the circuit simulation of the single-event effects in sub-100 nm CMOS ICs: the dynamic interaction between the charge collection process and the fast circuit response and the impact of the charge collection by multiple sensitive nodes- has been presented. As a solution of the first problem, three main approaches have been considered, based on the use of, respectively, a piecewise linear current pulse shape based on TCAD simulation results, a dual double-exponential current source and a bias-dependent current source. The methods for circuit simulation of the ionization response of several elements from single HCP based on using the look-up tables and analytical models of the ionization response dependence on the particle hit place have been considered. The performed analysis of the up-to-date approaches to simulation of the failure effects and ionization noise pulses in CMOS microcircuits permits to conclude that the most flexible and physically precise approach is that one based on using the current source, taking into account the electric mode of the transistor and being built to the Verilog-A code of the initial model.

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The formation conditions and the methods to detect the multiple-bit upsets in static random access memory caused by single charged particles of space have been determined. The topical problems, which solution is necessary for development of the fault tolerant and reliable new generation space equipment, have been defined.

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The DC-DC converters TID and SEE response model has been proposed. It has been shown that the model includes the main functional units. The model permits to determine the extent of the effect of the dose degradation and ionization response of the main units' parameters upon the switching DC-DC converter as a whole. The simulation results have been verified at U-400M cyclotron (Dubna).

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The structure of the hardware-software system for the radiation tests of the electronic component base, which has been realized based on the National Instruments hardware platform and the LabView programming environment, has been considered. The complex provides the control of radiation facilities, the operating mode setting and the functionality control of tested devices, the testing results post-processing.

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