Persons

Васильев Александр Вячеславович

Article author

The model of the process of growing semiconductor crystals by the Bridgeman method with taking into account the non-stationary effect from the technological equipment side has been presented. The comparison of the microhomogeneity value in a crystal with taking into account the multicomponent system peculiarities has been performed.

  • Counter: 1394 | Comments : 0

124498, Moscow, Zelenograd, Bld. 1, Shokin Square, MIET, editorial office of the Journal "Proceedings of Universities. Electronics", room 7231

+7 (499) 734-62-05
magazine@miee.ru