Persons

A gate dielectric is one of the crucial components of submicron MOS transistor structure which greatly affects its operation reliability. Transistor functionality loss, as well as a failure in the IC operation or a complete failure of the entire IC can be a result of dielectric breakdown. Therefore, the assessment of the gate dielectric defectiveness and its time to failure requires special attention. This paper considers a method for time to failure determination for MOS transistor gate dielectrics based on the time-dependent dielectric breakdown method. The time to failure is determined on the basis of the integral distribution of failures obtained by means of sampling of technological test structures measurements. Various parameter values are used that accelerate failure: high voltage and temperature. The Weibull distribution is used as a failure distribution statistic, and time to failure determination is carried out using a thermomechanical model ( E -model). The research has been performed on test structures represented by MOS capacitors with gate dielectric thickness of 5 nm. The test structures have been developed using the 65 nm technology and placed in a test chip on the same wafer with the integrated circuits. Software has been developed for the research that allows accelerated measurements in automatic mode. As a result of the conducted research, the parameters of the thermomechanical failure model have been determined; the dependencies of the gate dielectric time to failure on the operating conditions have been obtained. It has been found out that both hard and soft dielectric breakdowns can occur for the test structures under study. This method of control can be used to predict the long-term reliability of sub-100 nm MOS transistors gate dielectric, as well as for its production methods assessment.

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The constructive and technological schemes of self-formation of completely self-combined vertically integrated transistor structures for ULIC have been presented. The exact positioning of the elements with nanometer sizes on a surface and at a certain depth of a silicon plate has been achieved due to the application of the self-conjugate pseudo lithographic composite masks. The critical places in the design and manufacturing techniques of the structures with the narrow and turned ultrathin emitter areas have been considered.

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The analysis of the current and future developments in the field of the power elements based on the ß-decay has been executed. The possible technologies of creation have been described and the calculations of the efficiency for produced by them power sources have been presented. The possibility of creating a self-charging supercapacitor based on CNTs using isotope Ni63 and C14 has been examined. The theoretical calculation, confirming the perspectives of selecting the fields of investigations, has been performed.

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The magnetoresistive transducers of magnetic field have been claimed both for direct and indirect applications in various areas of industry, transport and special equipment. In the paper the special features of used terminology and dimensions in the main parameters of magnetic field magnetoresistive transformers have been revealed. The main results of experimental studies on the developed thin-film magnetoresistive nanostructures (TMN) with even and odd transfer characteristics have been presented. The TMN design on an anisotropic magnetoresistive effect has an odd transfer characteristic and conversion coefficient at the level of 8 mV/V/E. The TMN design based on a giant magnetoresistive effect has an even transfer characteristic and a conversion coefficient at the level of 27 mV/V/E. The results of promising design and technological solutions allowing reaching the values of conversion coefficient of TMN at the level exceeding 100 mV/V/E have been shown. The results of the study of the test spin-tunnel magnetoresistive nanostructure (spin-tunnel TMN) with giant magnetoresistive effect, exceeding 100% have been presented. The novelty of the obtained results has been reflected and the perspective of using highly sensitive TMN and creating the non-volatile MRAM on the basis of thin-film magnetoresistive structure with the spin-tunnel magnetoresistive effect have been determined.

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The structural and technological solutions to create the magnetosemiconductor components for wireless microsystem magnetoresistive magnetic field measurements as well as the study results for a high-sensitivity magnetoresistive transducer with a magnetic field concentrator have been presented. The characteristics of the instrumentation amplifier designed for use with the low-impedance signal from the magnetoresistive bridge, having a certain amount of its imbalance, have been given. The combined technology of manufacturing magnetosemiconductor IC based on the thin-film magnetoresistive structures has been described.

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The results of the development of technologies for magnetic semiconductor chips based on thin-film magnetoresistive multilayer nanostructures are presented. A brief overview of the main achievements in the field of magnetometric devices based on anisotropic and giant magnetoresistive effect is made.

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The promising tool for detecting the intermolecular interactions, including the biochemical interactions, is an ion-sensitive field effect transistor - ISFET. Using the ISFET the recognition of various mechanisms of the specifically adsorbed substances is possible. Also, ISFET is integrated with the CMOS technology, which opens the new perspectives in creation of the intellectual micro and nanosystems. In the work, the influence of the constructive-technological parameters of ISFET on the charge sensitivity has been described using the numerical simulation. The ISFET constructions based on a full depleted structure of silicon on insulator (SOI) with a floating gate have been presented. The constructions differ by the way of forming the contact liquid medium - gate. The analytical dependences of the charge sensitivity of ISFET have been obtained It has been shown that the limiting sensitivity is achievable on a composite structure with extremely small dimensions. The sensitivity of the considered construction of the ISFET-structure, designed by 1.2 µm norms with the analyte adsorbtion was 50 effective charges of electrons. The ISFET, designed with the submicron physical sizes (the wire width is 10 nm and length 100 nm), have sensitivity 1 - 2 electrons.

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The analysis of the exhibition «Productronika - 2007» exposition, that is one of the leading exhibitions of the technological equipment for production of electronic technology items, has been performed.

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