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Modern semiconductor devices switch substantially higher currents at higher voltages, while their sizes simultaneously shrink, impeding heat dissipation. The key parameter determining the quality of heat dissipation from a semiconductor device die is the junction-to-case thermal resistance. In this work a comparison of modern methods for measuring the semiconductor devices thermal resistance was presented. The authors conducted an experimental comparison of the measurement results obtained according to the JESD51-14 standard, which involves heating the object with heating current pulses of increasing duration, with the results obtained by the modulation method implying heating power modulated according to the harmonic law. The measurement object was a powerful FRED diode 60EPU02 manufactured by International Rectifier. The obtained results have shown good agreement between the methods. The novel modulation method has proven to be much easier to use, since it does not require complex object cooling systems and additional measurements with different thermal interfaces.

Key words: power semiconductor devices, thermal resistance measurement standards, modulation method
Published in: TECHNOLOGICAL PROCESSES
Bibliography link: Gavrikov A. A., Smirnov V. I. Comparison of standard and modulation methods for measuring thermal resistance of semiconductor devices using dual thermal interface. Izv. vuzov. Elektronika = Proc. Univ. Electronics. 2026;31(5):516–526. (In Russ.). DOI: 10.24151/1561-5405-2026-31-5-516-526.AQGGXF
Financial source: The work was carried out with the support of the Ministry of Education and Science of the Russian Federation within the framework of the State Assignment of the Kotelnikov Institute of Radioengineering and Electronics of Russian Academy of Sciences (FFWZ-2025-0001).

Andrey A. Gavrikov
Ulyanovsk Branch of the Kotelnikov Institute of Radioengineering and Electronics of Russian Academy of Sciences, Ulyanovsk, Russia

Vitaliy I. Smirnov
Ulyanovsk Branch of the Kotelnikov Institute of Radioengineering and Electronics of Russian Academy of Sciences, Ulyanovsk, Russia; Ulyanovsk State Technical University, Ulyanovsk, Russia

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Information about the publication

UDK: 681.518.3
Publication type: Scientific article
DOI: 10.24151/1561-5405-2026-31-5-516-526
RISC id: AQGGXF

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