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Semiconductor gas sensors main advantage is related to lower operating temperatures compared to sensors based on binary metal oxides. An additional improvement in the semiconductor gas sensors characteristics can be achieved by modifying them with noble metal nanoparticles. In this work, zinc stannate and silver nanoparticles were synthesized by chemical coprecipitation. The surface morphology, phase and chemical composition of the synthesized powders were analyzed. The gas-sensitive properties were studied under the influence of volatile organic compounds. It was shown that zinc stannate powder is a ZnSnO3 compound. Silver modification was implemented using X-ray photoelectron spectroscopy. Gas-sensitive layers based on zinc stannate at 250 °C demonstrated a response to 1000 ppm of acetone equal to 7.1. After silver-based modification, the response to acetone decreases, while the response to alcohols (ethyl and isopropyl) increases significantly. Silver nanoparticle modification has proven to increase the response of the zinc stannate sensor layers to isopropyl alcohol by 20 times. The corresponding increase in response to ethanol is 16 times.

Key words: zinc stannate, chemical coprecipitation, gas sensor, chemical sensitization, electronic sensitization
Published in: ELECTRONICS MATERIALS
Bibliography link: Shomakhov Z. V., Nalimova S. S., Rybina A. A., Buzovkin S. S., Bui C. D., Moshnikov V. A. Gas-sensitive layers based on silver-modified zinc stannate. Izv. vuzov. Elektronika = Proc. Univ. Electronics. 2026;31(5):507–515. (In Russ.). DOI: 10.24151/1561-5405-2026-31-5-507-515.ONJAKT

Zamir V. Shomakhov
Kabardino-Balkarian State University named after H. M. Berbekov, Nalchik, Russia; Institute of Informatics and Regional Management Problems – Branch of the Kabardino-Balkarian Scientific Center of the Russian Academy of Sciences, Nalchik, Russia

Svetlana S. Nalimova
Saint Petersburg Electrotechnical University, St. Petersburg, Russia

Arina A. Rybina
Saint Petersburg Electrotechnical University, St. Petersburg, Russia

Sergey S. Buzovkin
Saint Petersburg Electrotechnical University, St. Petersburg, Russia

Cong D. Bui
Saint Petersburg Electrotechnical University, St. Petersburg, Russia

Vyacheslav A. Moshnikov
Saint Petersburg Electrotechnical University, St. Petersburg, Russia

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Information about the publication

UDK: 621.382
Publication type: Scientific article
DOI: 10.24151/1561-5405-2026-31-5-507-515
RISC id: ONJAKT

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