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The characteristics of current and optical emission fluctuations of microplasmas at the p–n junctions breakdown in semiconductor devices provide information about structural defects and can be used to assess semiconductor devices quality. In this work the author designed the experimental setup and the method for measuring the fluctuations spectra of microplasmas optical emission, based on processing the series of the semiconductor crystal images under breakdown mode. It was found that the fluctuation spectra of microplasmas optical emission in the 0.1–10 Hz range for all studied samples of different device types follow the form S(f) ~ 1⁄f γ. It was shown that the exponent γ value strongly depends on the breakdown current and less depends on temperature. In InGaN/GaN light-emitting diodes the γ value in the short-wavelength part of the microplasmas emission spectrum is significantly lower than in the long-wavelength part. The difference in γ values is explained by the contribution of the point structure defects to the long-wavelength part of the microplasmas radiation spectrum.

Key words: microplasma p–n junction breakdown, optical emission, fluctuation spectrum, spectral shape exponent, point defects
Published in: Brief reports
Bibliography link: Kazankov A. A. Dynamic characteristics of optical emission of semiconductor devices in microplasma breakdown mode. Izv. vuzov. Elektronika = Proc. Univ. Electronics. 2026;31(5):611–615. (In Russ.). DOI: 10.24151/1561-5405-2026-31-5-611-615.BOUHDD
Financial source: the work has been supported by the Ministry of Science and Higher Education of the Russian Federation under the State Assignment to the Kotelnikov Institute of Radioengineering and Electronics of the RAS (FFWZ-2025-0001)

Alexander А. Kazankov
Ulyanovsk State Technical University, Ulyanovsk, Russia; Ulyanovsk Branch of the Kotelnikov Institute of Radioengineering and Electronics of Russian Academy of Sciences, Ulyanovsk, Russia

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Information about the publication

UDK: 681.518.3
Publication type: Short message
DOI: 10.24151/1561-5405-2026-31-5-611-615
RISC id: BOUHDD

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