Dynamics of Excess Holes Collection in -AlGaAs/Quantum Wells of Heterostructures

Dynamics of Excess Holes Collection in -AlGaAs/Quantum Wells of Heterostructures

The influence of the excess holes capture efficiency on the carrier collection process with an increasing photoexcitation in quantum wells of n -AlGaAs/GaAs heterostructures has been studied. It has been shown that the influence of the ratio of photoluminescence intensities from quantum well and from barrier layers on the quantum well width has an oscillating form. The hole capture times in the maximum and the minimum of the oscillations have been estimated (3 psec and 370 psec, respectively). The energy transition shift in resonant quantum well at high excitation densities has been explained by the «charge buildup effect» due to the difference between the capture efficiencies of the electrons and holes.
Natalya G. Yaremenko
Kotel’nikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Fryazino, Russia
Valery A. Strakhov
Kotel’nikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Fryazino, Russia
Mariya V. Karachevtseva
Kotel’nikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Fryazino, Russia
Yuri V. Fedorov
Institute of Ultra-High Frequency Semiconductor Electronics Russian Academy of Sciences, Moscow
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