Magnetic Field Sensors Based on Anisotropic Magnetoresistive Thin-Film Structures for Work in a Wide Temperature Range

Magnetic Field Sensors Based on Anisotropic Magnetoresistive Thin-Film Structures for Work in a Wide Temperature Range

The results of the work on creation of the design and geometry optimization of the magnetic field sensors based on anisotropic magnetoresistive thin-film structures have been presented. The magnetic field sensors with an odd linear response with the sensitivity up to 23.7 (mV/V)(kA/m) and 180 degree rotation sensor with the signal amplitude 15 mV/C have been obtained. The possibility of the developed sensors functionality in hard environments in the temperature range from minus 60 up to +150 °C based on the thermal tests results has been demonstrated. The temperature coefficient of sensitivity was minus 0.35% °C. The sensors have been tested in the angle, speed and phase sensors in the automotive industry. The characteristics of the developed sensors have shown that they match the characteristics of the sensors produced by the leading world firms.
Nikolay A. Dyuzhev
National Research University of Electronic Technology, Moscow, Russia
N.S. Mazurkin
National Research University of Electronic Technology, Moscow
V.S. Pozdnyakov
JSC Avtoelektronika
A.S. Iurov
National Research University of Electronic Technology, Moscow
M.Y. Chinenkov
National Research University of Electronic Technology, Moscow; «SPINTEK» LLC, Moscow
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