1. A review of recent applications of ion beam techniques on nanomaterial surface modification: Design of nanostructures and energy harvesting / W. Li, X. Zhan, X. Song et al. // Small. 2019. Vol. 15. Iss. 31. Art. ID: 1901820. DOI: 10.1002/smll.201901820 EDN: TIRTFQ
2. Recent advances in focused ion beam nanofabrication for nanostructures and devices: Fundamentals and applications / P. Li, S. Chen, H. Dai et al. // Nanoscale. 2021. Vol. 13. Iss. 3. P. 1529-1565. DOI: 10.1039/D0NR07539F EDN: XRPRUV
3. A review of focused ion beam applications in optical fibers / K. Sloyan, H. Melkonyan, H. Apostoleris et al. // Nanotechnology. 2021. Vol. 32. No. 47. Art. ID: 472004. DOI: 10.1088/1361-6528/ac1d75 EDN: BQIPDM
4. Comparative study of plasmonic antennas fabricated by electron beam and focused ion beam lithography / M. Horák, K. Bukvišová, V. Švarc et al. // Sci. Rep. 2018. Vol. 8. Iss. 1. Art. No. 9640. DOI: 10.1038/s41598-018-28037-1
5. Ha S.-J., Yoon S.-J., Baek S.-Y., Jung S.-T. A study on the development of sub-micron single-crystal diamond tools for machining diffractive optical elements // Int. J. Adv. Manuf. Technol. 2023. Vol. 126. P. 4399-4406. DOI: 10.1007/s00170-023-11374-5 EDN: PDMSGR
6. Mayer J., Giannuzzi L. A., Kamino T., Michael J. TEM sample preparation and FIB-induced damage // MRS Bulletin. 2007. Vol. 32. Iss. 5. P. 400-407. DOI: 10.1557/mrs2007.63 EDN: ESSGQJ
7. Drezner Y., Greenzweig Y., Raveh A. Strategy for focused ion beam compound material removal for circuit editing //j. Vac. Sci. Technol. B. 2012. Vol. 30. Iss. 1. Art. No. 011207. DOI: 10.1116/1.3674280
8. Comparison of silicon and 4H silicon carbide patterning using focused ion beams / S. K. P. Veerapandian, S. Beuer, M.Rumler et al. // Nucl. Instrum. Methods Phys. Res. B. 2015. Vol. 365 (A). P. 44-49. DOI: 10.1016/j.nimb.2015.07.079
9. Ion channeling effects on the focused ion beam milling of Cu / B. W. Kempshall, S. M. Schwarz, B. I. Prenitzer et al. //j. Vac. Sci. Technol. B. 2001. Vol. 19. Iss. 3. P. 749-754. DOI: 10.1116/1.1368670
10. Frey L., Lehrer C., Ryssel H. Nanoscale effects in focused ion beam processing // Appl. Phys. A. 2003. Vol. 76. P. 1017-1023. DOI: 10.1007/s00339-002-1943-1 EDN: ESHOLN
11. Rumyantsev A. V., Borgardt N. I., Volkov R. L., Chaplygin Yu. A. Study of silicon dioxide focused ion beam sputtering using electron microscopy imaging and level set simulation // Vacuum. 2022. Vol. 202. Art. ID: 111128. DOI: 10.1016/j.vacuum.2022.111128 EDN: RLMJEU
12. Full three-dimensional simulation of focused ion beam micro/nanofabrication / H.-B. Kim, G. Hobler, A. Steiger et al. // Nanotechnology. 2007. Vol. 18. No. 24. Art. ID: 245303. DOI: 10.1088/0957-4484/18/24/245303
13. Simulating advanced focused ion beam nanomachining: A quantitative comparison of simulation and experimental results / K. T. Mahady, S. Tan, Y. Greenzweig et al. // Nanotechnology. 2018. Vol. 29. No. 49. Art. ID: 495301. DOI: 10.1088/1361-6528/aae183
14. Level set approach for the simulation of focused ion beam processing on the micro/nano scale / H.-B. Kim, G. Hobler, A. Steiger et al. // Nanotechnology. 2007. Vol. 18. No. 26. Art. ID: 265307. DOI: 10.1088/0957-4484/18/26/265307
15. Боргардт Н. И., Волков Р. Л., Румянцев А. В., Чаплыгин Ю. А. Моделирование распыления материалов фокусированным ионным пучком // Письма в ЖТФ. 2015. Т. 41. № 12. С. 97-104. EDN: UJMTSV
Borgardt N. I., Volkov R. L., Rumyantsev A. V., Chaplygin Yu. A. Simulation of material sputtering
with a focused ion beam. Tech. Phys. Lett., 2015, vol. 41, pp. 610–613.
https://doi.org/10.1134/S106378501506019X
16. Inverse modeling of FIB milling by dose profile optimization / S. Lindsey, S. Waid, G. Hobler et al. // Nucl. Instrum. Methods Phys. Res. B. 2014. Vol. 341. P. 77-83. DOI: 10.1016/j.nimb.2014.09.006 EDN: UTKKMN
17. Sputtering of redeposited material in focused ion beam silicon processing / N. I. Borgardt, A. V.Rumyantsev, R. L. Volkov et al. // Mater. Res. Express. 2018. Vol. 5. No. 2. Art. No. 025905. DOI: 10.1088/2053-1591/aaace1 EDN: XXWCDJ
18. Lindsey S., Hobler G. Sputtering of silicon at glancing incidence // Nucl. Instrum. Methods Phys. Res. B. 2013. Vol. 303. P. 142-147. DOI: 10.1016/j.nimb.2012.12.087
19. Burenkov A., Sekowski M., Belko V., Ryssel H. Angular distributions of sputtered silicon at grazing gallium ion beam incidence // Nucl. Instrum. Methods Phys. Res. B. 2012. Vol. 272. P. 23-27. DOI: 10.1016/j.nimb.2011.01.025 EDN: XMZWBV
20. Румянцев А. В., Боргардт Н. И., Волков Р. Л. Моделирование распыления многослойных подложек фокусированным ионным пучком // Письма в ЖТФ. 2023. Т. 49. № 10. С. 39-42. -. DOI: 10.21883/PJTF.2023.10.55433.19533 EDN: AIVWLW
Rumyantsev A. V., Borgardt N. I., Volkov R. L. Simulation of focused ion beam milling of multilayer
substrates. Pis’ma v ZhTF = Tech. Phys. Lett., 2023, iss. 5, pp. 77–80.
https://doi.org/10.21883/TPL.2023.05.56035.19533
21. Canny J. A computational approach to edge detection // IEEE Transactions on Pattern Analysis and Machine Intelligence. 1986. Vol. PAMI-8. No. 6. P. 679-698. DOI: 10.1109/TPAMI.1986.4767851
22. Gibou F., Fedkiw R., Osher S. A review of level-set methods and some recent applications //j.Comput. Phys. 2018. Vol. 353. P. 82-109. DOI: 10.1016/j.jcp.2017.10.006
23. Probe current distribution characterization technique for focused ion beam / Sh. Tan, R. Livengood, Yu. Greenzweig et al. //j. Vac. Sci. Technol. B. 2012. Vol. 30. Iss. 6. Art. ID: 06F606. DOI: 10.1116/1.4766882
24. Manstetten P., Weinbub J., Hössinger A., Selberherr S. Using temporary explicit meshes for direct flux calculation on implicit surfaces // Procedia Comput. Sci. 2017. Vol. 108. P. 245-254. DOI: 10.1016/j.procs.2017.05.067
25. SDTrimSP Version 5.05 / A. Mutzke, R. Schneider, W. Eckstein et al. Garching: IPP, 2015. 70 p.