Persons

The structural and technological solutions to create the magnetosemiconductor components for wireless microsystem magnetoresistive magnetic field measurements as well as the study results for a high-sensitivity magnetoresistive transducer with a magnetic field concentrator have been presented. The characteristics of the instrumentation amplifier designed for use with the low-impedance signal from the magnetoresistive bridge, having a certain amount of its imbalance, have been given. The combined technology of manufacturing magnetosemiconductor IC based on the thin-film magnetoresistive structures has been described.

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