Persons

Урумов Владимир Владимирович
PhD student of the Electronic Devices Department, North Caucasian Institute of Mining and Metallurgy (State Technological University) (Russia, 362021, Republic of North Ossetia – Alania, Vladikavkaz, Nikolaev st., 44); Junior Scientific Researcher of the Nuclear Research Laboratory, North Ossetian State University named after K. L. Khetagurov (Russia, 362025, Republic of North Ossetia – Alania, Vladikavkaz, Vatutin st., 44-46)

Article author

The electroluminescent light source can be used as flexible compact flat sources of uniform illuminating. The studies on improvement of its main characteristics, especially of color intensity generation, continue. In the paper the possibility of using the changing capacitive and current characteristics of flexible light sources - electroluminescent panels to fix and determine the level of external radiation, which includes the near infrared, optical and ultraviolet ranges, has been shown. The degree of the influence of radiation on the capacitive and current characteristics of these structures based on ZnS: Cu, Mn phosphor using a barium titanate ferroelectric has been revealed. During the studies the instrumental and expert analysis as well as the non-destructive and destructive technological control have been used. It has been found that while changing the radiation intensity from 0 to 2500 kd/m the electric capacity of the structure with 600 cm area becomes 25 % increased, and the intensity increase leads to considerable proportional increase (up to 20 %) of the structure conductivity current

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The problem of increasing the conversion coefficient of two-chamber electro-optical converters used in the night vision technique has been considered. The results of the study on the influence of the vacuum processing technology for both chambers of the given products on their amplifying ability have been given. The methods have been proposed for increasing the level of conversion by changing the temperature-time mode of processing the photocathode of the first chamber of the device, as well as optimizing the sputtering of chromium on the mica substrate of the cathode of the second chamber. During the research, instrumental, expert and statistical analysis the non-destructive and destructive technological control have been used. As a result, an increase of the yield of products in terms of the conversion rate has become 35 %, an increase of the average value of η has become 65 %.

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