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In recent decades, the requirements for coordinate detectors have increased in terms of such parameters as spatial and temporal resolution, loading capacity, radiation resistance, and the possibility of obtaining large-area detectors. All these requirements are largely satisfied by the gas electronic multiplier. In this work, the results of research on the production of perforated structures necessary for gas electronic multipliers manufacturing by chemical etching using domestic foil-clad polyimide films, are presented. The possibility is shown of obtaining a system of through holes on foil-clad polyimide films with an adhesive sublayer. The results of studies of the electronic amplification capability of the obtained structures conducted using a specially manufactured experimental cell are presented. The obtained samples with active zone dimensions 10 × 10 mm and with amplification coefficient K ≥ 200 typical for structures with cylindric channels without dielectric rings, have demonstrated their operational integrity. Cumulative thickness of the structures’ dielectric layer is about 10 µm, hole diameter is 70 µm at 140 µm intervals.

Key words: gas electron multiplier, perforated structures, polyimide films, electronic amplification, photolithography, chemical etching, adhesive layer
Published in: Technological processes and routes
Bibliography link: Kasumov Yu. N., Puhaeva N. E., Movchan S. A., Goncharov I. N., Urumov V. V. Production and research of perforated structures for gas electronic multipliers based on foil-clad polyimide films. Proc. Univ. Electronics, 2023, vol. 28, no. 3, pp. 326–336. https://doi.org/ 10.24151/1561-5405-2023-28-3-326-336. – EDN: UPGBBX.

Yuri N. Kasumov
North Caucasian Institute of Mining and Metallurgical (State Technological University), State Technological University) (Russia, 362021, Republic of North Ossetia – Alania, Vladikavkaz, Nikolaev st., 44; North Ossetian State University named after K. L. K

Nelly E. Puhaeva
North Ossetian State University named after K. L. Khetagurov, Russia, 362025, Republic of North Ossetia – Alania, Vladikavkaz, Vatutin st., 44-46; Joint Institute for Nuclear Research, Russia, 141980, Moscow region, Dubna, Academician Baldin st., 4

Sergey A. Movchan
Joint Institute for Nuclear Research, Russia, 141980, Moscow region, Dubna, Academician Baldin st., 4

Igor N. Goncharov
North Caucasian Institute of Mining and Metallurgical (State Technological University), State Technological University) (Russia, 362021, Republic of North Ossetia – Alania, Vladikavkaz, Nikolaev st., 44; North Ossetian State University named after K. L. K

Vladimir V. Urumov
North Caucasian Institute of Mining and Metallurgical (State Technological University), State Technological University) (Russia, 362021, Republic of North Ossetia – Alania, Vladikavkaz, Nikolaev st., 44; North Ossetian State University named after K. L. K

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UDK: [621.3.049.7:776:620.183.25]:621.385.832.84
Publication type: Scientific article
Source lang: Russian
DOI: 10.24151/1561-5405-2023-28-3-326-336
RISC id: UPGBBX

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