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The conventional programs permit to simulate the CMOS-microchips considering the influence of cosmic rays in active elements. However, the usage of such programs in simulation of the microchips considering the influence of the Single Event Effects (SEE) is ineffective mainly because of complexity of equivalent schemes, which describe SEE. The description technique, offered by the authors, uses the П-type approximation of real ionization currents in p/n-junctions. It enables to set these currents as the initial data. The approximated values of currents are computed using TCAD Sentaurus for a standard set of elements and are stored as a library. In simulation of SEE in CMOS-microchips with the automatically generated topology, based on the functional library, two types of labels are used, which are assigned to the library elements (LE). The labels of the first type are assigned permanently to all LE during creation of the library. The labels of the second type are used during the microchip functional description. The approach, which has been considered, simplifies the work of the most frequently used synthesizers, which permits to manipulate the library elements. Such method simplifies the work of the most frequently used synthesizers, which permits to manipulate LE. The subjective factor in choosing the labels for LE is justified while searching for <<weak>> spots in the microchip structure and in evaluation of the CMOS-microchip reaction to SEE at those spots.

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The factors limiting the frequency and accuracy characteristics of CMOS-ADC have been considered. The architecture of section DAC, that maintains the known advantages of string DAC and provides the highest accuracy and the speed of conversion, has been offered.

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