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The influence of morphology of metal-ferroelectric-metal interfaces structures on their electric properties has been investigated. The experimental researches of buffer layers influence and the methods of the electrode deposition on the morphology on the ferroelectric film have been conducted. The theoretical analysis of the dielectric properties has been performed on the basis of the experimental data for heterostructures, however, the final assessment has been made using the mathematical modeling methods.
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The technological capabilities of fiber electrochemical formation of vertical contact structures on the basis of system copper-tin for installation of silicon crystals, including on 3D-technologies have been considered. Possibility of fixing of a landing gap a crystal plateau for prevention of short circuit of contact areas by solder material has been shown.
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