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The constructive and technological schemes of self-formation of completely self-combined vertically integrated transistor structures for ULIC have been presented. The exact positioning of the elements with nanometer sizes on a surface and at a certain depth of a silicon plate has been achieved due to the application of the self-conjugate pseudo lithographic composite masks. The critical places in the design and manufacturing techniques of the structures with the narrow and turned ultrathin emitter areas have been considered.
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The influence of hetero-layer on the elastic constants and surface tension in nanoelectric-mechanical systems has been considered. The quantitative comparison of these effects on an example of a silicon resonator has been performed. It has been shown that the presented results are within the range of possible experimental observation.
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The analysis of the exhibition «Productronika - 2007» exposition, that is one of the leading exhibitions of the technological equipment for production of electronic technology items, has been performed.
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