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The mechanism of the impurity carbon on boron diffusion of the n - p - n SiGe HBT’s base has been considered. Some figures demonstrating the dependence of electrophysical characteristics of the structure on the carbon concentration have been presented. It has been shown, that at the carbon concentrations exceeding 1· 10 cm a charge carriers lifetime decline has been observed, but this does not result in the decrease of the cut-off frequency and maximum HBT oscillation frequency, because of the less intensive boron diffusion, determining the neutral base transient time.

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