Persons

• Counter: 341 | Comments : 0

CMOS ICs are widely used in on-board devices in spacecraft operating in conditions of high temperature and radiation low intensity. Therefore, it is important to know the processes leading to aging of circuits, i.e. to worsening of the parameters under the influence of the destabilizing factors. The processes of CMOS IC aging in electric mode under irradiation and at higher temperature have been considered. The processes of the surface defect formation in CMOS IC under irradiation by gamma-rays and at higher temperature without irradiation have been investigated. The density of defects at the Si-SiO interface has been calculated from the values of the surface mobility of charge carriers in the channel of the MOS transistors of CMOS ICs, which had been determined from the values of the slope of the drain-gate characteristics. The obtained results show that under the influence of the low intensity irradiation by gamma-rays and in case of tests at higher temperature without exposure to ionizing radiation two stages of the surface defects formation are observed.

• Counter: 1602 | Comments : 0