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The influence of reductive-oxidative mediums on the acceptor centers generation in CdxHg1–xTe films, grown by the molecular beam epitaxy on GaAs (301) substrates, has been investigated. During the long-term stability testing the parameters of the untreated n-type films remain stable, while in the treated films the conductivity and the carrier mobility of the treated samples may decrease by up to two orders of magnitude. It has been shown that an acceptor source is formed on the epilayer surface during treatment. Probably, these acceptors are mercury vacancies.

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