Persons

A comprehensive RF and microwave characterization technique for ICs packages has been presented. The discussed technique is based on a full-wave numerical simulation and vector measurements. The model parameters and the maximum frequency of using home-made metal ceramic and metal glass packages have been determined.

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The CMOS SOI technology is perspective for creating variety nomenclature of radio-frequency (RF) analog-digital transceiver integrated circuits, including hardware. Testing results of designing and studies for the library RF elements and the set of the functional blocks designed to domestic CMOS SOI 180 nm technology have been presented. The library of the elements includes the RF n-channel MOSFETs with the cut-off frequency up to 30 GHz, MOSFET based varactors, spiral inductors, MIM capacitors, resistors and RF transceiver IP-blocks, such as amplifiers, voltage control oscillators, frequency dividers with the operating frequencies in the range from 0.1 to 4 GHz. The resistance of the IP-blocks hardness to the total ionizing dose exposure is not less than 3 · 10 au. No SEL or catastrophic failures were observed under the impact of heavy charged particles with the linear energy transfer up to 80 MeV·cm/mg. The study results have confirmed the possibility to create the transceiver ICs for the space applications with the working frequencies up to 3 GHz 180 nm CMOS SOI technology.

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The design considerations for passive and active vector silicon-based monolithic microwave phase shifters for Phased Array Radar application have been presented. It has been shown that the use of the active vector phase shifters provides a significant reduction of the introduced losses and an improvement of precision parameters, inaccessible for the passive transmission phase shifters. Five types of monolithic and hybrid multi-bit phase shifters of 2-12 GC range have been developed and the experimental study results have been presented.

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The radiation effects in planar nanosized structures under static and pulse irradiation have been analyzed. The characteristics of the planar nanosized structure samples fabricated by deposition of super-thin titanium film and of the field-effect transistors based, on the carbon nanotube bundles, on the semi-isolating GaAs substrate have been investigated. The physical mechanisms in radiation change of the nanoelectronics device characteristics have been determined.

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