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The results of the study on the influence of the local anodic oxidation (LAO) technological modes on the oxide nanostructures (ONS) formation process on the gallium arsenide surface have been presented. The influence of amplitude and duration of the voltage impulses, the air relative humidity level in the technological chamber and the cantilever fluctuations amplitudes on the geometrical parameters of gallium arsenide ONS has been investigated. It has been found that the increase of relative humidity level from 60 to 90% leads to the decrease in the LAO threshold voltage from 7.0 to 6.0 V. It has been shown that the increase in the fluctuation amplitude from 0.1 to 2.8 nm leads to the ONS height reduction from 3.20±0.34 to 1.10±0.13 nm and of the ONS diameter from 218.4±29.5 nm to 78.1±10.3 nm.

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