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A two-step MOCVD-hydride method of fabricating GaN layers has been investigated. Some issues of doping the layers by donor and acceptor impurities have been studied. The laws of the influence of technological modes on the growth rate, structure and the functional characteristics of the quantum-sized heterostructures based on GaN with multiple quantum wells have been determined.
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The optimization procedure in growing the layers of A3N nitrides by MOCWD method using the X-ray-diffractometry method has been considered. It has been determined that the structural perfection of the layers, obtained by measurement of the rocking waves, correlates with the emitting efficiency of the LED structures.
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